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Gallium phosphide (GAP) crystal substrate, single crystal chip
Update Time : 2020-06-16 View : 2605


Supply of gallium phosphide (GAP) crystal substrates, single crystals_ Manufacturer brand_ Shenzhen Pan American Metal Co., Ltd. welcomes customers to call us for consultation and negotiation of transactions, 18928450898
Basic parameters
Material: gallium phosphide
Model: gap
Characteristics: good insulation
Application: optics, semiconductor, aviation
Type: single crystal, polycrystal, semiconductor
Brand: Pan American metal
Process customization: Yes
Origin: Guangdong
detailed description
Product Name:
Gallium phosphide (GAP) crystal substrate
Product introduction:
Technical parameters:
Crystal structure:
Cubic a = 5.4505
Growth method:
Tirafa
Density:
4.13  g/cm3
Melting point:
1480 ℃
Coefficient of thermal expansion:
5.3 x10-6
Dopant:
S-doped; undoped
Thermal conductivity:
2~8 x1017/cm3 ;4~ 6 x1016/cm3
Resistivity w.cm:
~0.03  ;~0.3
EPD (cm-2 ):
< 3x10E5 ;< 3x10E5
General dimensions:
Conventional crystal direction: < 111 >; conventional size: 10x10x0.5mm, dia2 "x0.5mm; polishing condition: single or double polishing;
Note: the direction and size can be customized according to the customer's requirements.
remarks:
Class 1000 super clean room class 100 super clean bag


供应磷化镓(GaP)晶体基片、单晶片_厂家品牌_深圳泛美金属欢迎广大客户来电咨询洽谈交易,18928450898


基本参数

材质:磷化镓

型号:GaP

特性:绝缘性好

用途:光学,半导体,航空

种类:单晶,多晶,半导体

品牌:泛美金属

加工定制:是

产地:广东


详细说明

产品名称:

磷化镓(GaP)晶体基片

产品简介


技术参数:

晶体结构

立方         a =5.4505

生长方法:

提拉法

密度:

4.13  g/cm3

熔点:

1480

热膨胀系数

5.3 x10-6

掺杂物质

掺S 不掺杂

热传导率

2~8 x1017/cm3 4~ 6 x1016/cm3

电阻率W.cm

~0.03 ~0.3

EPD (cm-2 )

< 3x10E5 < 3x10E5


常规尺寸:

常规晶向:<111>;常规尺寸:10x10x0.5mm、dia2"x0.5mm;抛光情况:单抛或双抛;

注:可按客户需求定制相应的方向和尺寸。

备注:

1000级超净室100级超净袋

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