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InSb single crystal substrate
Update Time : 2020-06-17 View : 1881

供应锑化铟InSb单晶基片厂家品牌_深圳泛美金属欢迎广大客户来电咨询洽谈交易,18928450898

InSb is an important compound semiconductor, which is mainly used in far-infrared photodetectors, Hall devices and magnetoresistive devices.
Growth method
Tirafa
crystal structure
cube
Lattice constant (nm)
0. 648
Crystallographic orientation
< 100 >, < 110 >, < 111 > ± 0.5 º, or special direction
Doping degree
Dopant element
Undoped
Te doping
Ge doping
Conductive type
N
N
P
Band gap (EV)
zero point one eight
Resistivity (Ω· cm)
Mobility (cm2 / (V · s))
Carrier density (/ cm3)
1~5×1014
1~2×1015
Dislocation density (EPD) (/ cm2)
<2×102
size
Φ 2 ″× 0.5 special direction and size can be customized according to customer requirements
surface
Single, double, or cutting
Thickness (UM)
Φ 2 ″× 0.5mm, Φ 3 ″× 0.5mm, customized
TTV (Total Thickness
Variation)
TIR (Total Indicated
Reading)
Bow
Warp
packing
Class 100 clean bag, class 1000 super clean room

InSb是一种重要的化合物半导体,主要用于制作远红外光电探测器、霍耳器件和磁阻器件。

生长方法

提拉法

晶体结构

立方

晶格常数(nm)

0. 648

晶向

、、±0.5º、或特殊方向

掺杂程度

掺杂元素

不掺杂

掺Te

掺Ge

导电类型

N

N

P

带隙(eV)

0.18

电阻率(Ω·cm)




迁移率(cm2/(v·s))




载流子密度(/cm3

1~5×1014

1~2×1015


位错密度(EPD)(/cm2

<2×102

尺寸

Φ2″×0.5可按照客户需求,定制特殊方向和尺寸

表面

单抛片、双抛片、或切割片

厚度(um)

Φ2″×0.5mm、Φ3″×0.5mm,可定制

TTV (Total Thickness

Variation)


TIR (Total Indicated

Reading)


Bow


Warp


包装

100级洁净袋,1000级超净室

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