With the rapid development of 5g, electric vehicles and other technologies, the demand for power semiconductors is heating up. Focusing on the development potential of the third generation semiconductor materials silicon carbide (SIC) and gallium nitride (GAN), global crystal (6488) formally signed a contract with Taiwan Jiaotong University on July 27 to jointly establish a compound semiconductor research center, and jointly research and develop the third generation semiconductor materials, including but not limited to 6-8 inch silicon carbide (SIC) and gallium nitride (GAN), with a view to rapidly establishing compound semiconductors in Taiwan Sports industry chain.
Lu Mingguang, honorary chairman of Sino US silicon crystal, the parent company of global wafer, said that "silicon carbide (SIC) and gallium nitride (GAN) are very promising semiconductor materials, which are the most critical elements in the next wave of 5g industry, high-power power generation and high-frequency application of electric vehicles", and stressed that "all countries in the world regard silicon carbide (SIC) as the raw material and technology for national strategic development, and The establishment of compound semiconductor research center in Jiaotong University is an important start of alliance between strong and powerful. "
Chen Xinhong, acting president of national Jiaotong University, said, "national Jiaotong University leads the semiconductor research in Taiwan. For example, the first silicon wafer in Taiwan was completed in the laboratory of Jiaotong University. Jiaotong University combines the strength of alumni to assist the University in promoting cutting-edge research. It is expected that in five to ten years, Jiaotong University will reach the goal of being the first in the world in three to five fields, thus achieving the vision of "great university". In this research center, the team of Jiaotong University will integrate the characteristics of cross-scale theoretical research, integrate the unique technologies related to global wafer production process, and integrate theory and practice to jointly develop innovative high-capacity compound semiconductor wafer manufacturing technology, with the goal of manufacturing large-scale, high-quality and low defect wafers.
Compared with traditional semiconductor silicon materials, silicon carbide (SIC) and gallium nitride (GAN) have excellent thermal conductivity and high-speed switching ability, which can reduce operation loss; excellent performance is suitable for operation in high temperature and high current environment, which can provide higher power and excellent heat conduction; its heat dissipation performance is superior, and high saturation current is suitable for fast charging It is widely used in 5g communication, fast charging and ultra-high voltage products such as electric vehicles. It has great market potential and is regarded as the future star of power semiconductor components.
Global wafer has a long-term layout of compound semiconductor materials, with excellent R & D team and key patent technology; national Jiaotong University has been deeply engaged in semiconductor cutting-edge research for a long time, with abundant technical energy and excellent R & D talents. Through joint cooperation to establish compound semiconductor research center, we can integrate and enlarge research energy through industry university cooperation, and quickly introduce R & D achievements into the industry Application, to improve the visibility of Taiwan's compound semiconductor industry chain, and to build a leading edge in the future.