1,Physical character:Atomic Weight:114.818
Melting Point:mp:156.61 ℃ Boiling Point:bp:2080℃
2,Specification:
High Purity Indium:
In二5 the content of Indium is above 99 999%.The total content of impurity
element Ag,Al,As,Cd,Cu,Fe,Mg,Ni,Pb,Sn,T1,&Zn is bellow 10 ppm;
Ultra Purity Indium:
In—06.the content
of Indium is above 99.9999%.The total
content 0f impurity element ofCd,cu,Fe,Mg,Pb,s,Si&Sn is bellow 1 ppm;
Ultra High Purity Indium:
In一07.The content
of Indium is above 99.99999%.The total
content of impurity element of Ag,Cd,Cu,Fe,Mg,Ni.Pb&Zn iS
bellow 0.1 ppm;
3,Physical Size:Rod,Ingot,Granule.
4,Usage:It is mainly
used in the manufacture of III—V compound semiconductor,high purity alloy,transistor base and as a dopant of Germanium&Silicon single
crystal·
5。Packing:To be sealed in composite foil bag under vacuum;