Gan has the properties of wide direct band gap, strong atomic bond, high thermal conductivity and strong radiation resistance. It is not only a short wave optical electronic material, but also an alternative material for high-temperature semiconductor devices. Gan system can be used to prepare blue and green LED, blue and UV LD, UV detector and high-frequency high-power electronic devices. Gan is easy to mix with AlN, Inn and so on, and can be made into various heterostructures. 2-deg with a mobility of 105cm2 / (V · s) at low temperature has been obtained, effectively shielding the factors such as optical phonon scattering, ionized impurity scattering and piezoelectric scattering.
Growth method
HVPE (hydride meteorological epitaxy)
crystal structure
Hexagons
Lattice constant (nm)
a：0.319     c：0.519
Crystallographic orientation
C-axis(0001) ± 0.5°
Doping degree
Light, medium and heavy admixtures
Dopant element
Conductive type
N
Semi-Insulating
Band gap (EV)
three point four four
Resistivity (Ω· cm)
< 0.5 Ω·cm
>106Ω·cm
Mobility (cm2 / (V · s))
Carrier density (/ cm3)
Dislocation density (EPD) (/ cm2)
<5x106
size
10.0mm × 10.5mm, 14.0mm × 15.0mm, special direction and size can be customized according to customer requirements
surface
Single, double or cutting
Thickness (UM)
300 ± 25, 350 ± 25, 400 ± 25, customizable
TTV (Total Thickness
Variation)
TIR (Total Indicated
Reading)
Bow
Warp
packing
Class 100 clean bag, class 1000 super clean room