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InSb single crystal substrate
Update Time : 2020-06-17 View : 1588


InSb is an important compound semiconductor, which is mainly used in far-infrared photodetectors, Hall devices and magnetoresistive devices.
Growth method
Tirafa
crystal structure
cube
Lattice constant (nm)
0. 648
Crystallographic orientation
< 100 >, < 110 >, < 111 > ± 0.5 º, or special direction
Doping degree
Dopant element
Undoped
Te doping
Ge doping
Conductive type
N
N
P
Band gap (EV)
zero point one eight
Resistivity (Ω· cm)
Mobility (cm2 / (V · s))
Carrier density (/ cm3)
1~5×1014
1~2×1015
Dislocation density (EPD) (/ cm2)
<2×102
size
Φ 2 ″× 0.5 special direction and size can be customized according to customer requirements
surface
Single, double, or cutting
Thickness (UM)
Φ 2 ″× 0.5mm, Φ 3 ″× 0.5mm, customized
TTV (Total Thickness
Variation)
TIR (Total Indicated
Reading)
Bow
Warp
packing
Class 100 clean bag, class 1000 super clean room

InSb是一种重要的化合物半导体,主要用于制作远红外光电探测器、霍耳器件和磁阻器件。

 

生长方法

提拉法

晶体结构

立方

晶格常数(nm)

0. 648

晶向

<100>、<110>、<111>±0.5º、或特殊方向

掺杂程度

 

掺杂元素

不掺杂

掺Te

掺Ge

导电类型

N

N

P

带隙(eV)

0.18

电阻率(Ω·cm)




迁移率(cm2/(v·s))




载流子密度(/cm3

1~5×1014

1~2×1015


位错密度(EPD)(/cm2

<2×102

尺寸

Φ2″×0.5可按照客户需求,定制特殊方向和尺寸

表面

单抛片、双抛片、或切割片

厚度(um)

Φ2″×0.5mm、Φ3″×0.5mm,可定制

TTV (Total Thickness

Variation)


TIR (Total Indicated

Reading)


Bow


Warp


包装

100级洁净袋,1000级超净室

  

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