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Silicon (SI) crystal substrate
Update Time : 2021-11-05 View : 2348

产品名称:

硅(Si)晶体基片


产品简介:

化学符号为Si,主要用途有:制作半导体器件、红外光学器件及太阳能电池衬底等材料。


技术参数:

掺杂物质:掺B掺P类型:P N电阻率Ω.cm:10-3 ~ 4010-3 ~ 40EPD (cm-2 ):≤100≤100氧含量( /cm3 ):≤1.8 x1018≤1.8 x1018碳含量( /cm3 ):≤5x1016≤5x1016


常规规格:

晶体方向:、、± 0.5°  或  特殊的方向;

常规尺寸:dia1"x 0.30 mm;dia2"x0.5mm;dia3"x0.5mm;dia4"x0.6mm;

表面粗糙度:Ra<10A

可提供热氧化SiO2层的Si片;Si+SiO2+Ti+Pt的基片!欢迎您的咨询!


标准包装:

1000级超净室100级超净袋单片盒或25片插盒封装


Product Name:
Silicon (SI) crystal substrate
Product introduction:
The chemical symbol is Si, which is mainly used to make semiconductor devices, infrared optical devices, solar cell substrates and other materials.
Technical parameters:
Dopant: dopant B dopant P type: P n resistivity Ω. Cm: 10-3 ~ 4010-3 ~ 40epd (cm-2): ≤ 100 ≤ 100 oxygen content (/ cm3): ≤ 1.8 x1018 ≤ 1.8 x1018 carbon content (/ cm3): ≤ 5x1016 ≤ 5x1016
General specifications:
Crystal direction: < 111 >, < 100 >, < 110 > ± 0.5 ° or special direction;
General dimensions: dia1 "x 0.30 mm; dia2" x 0.5mm; dia3"x0.5mm;dia4"x0.6mm;
Surface roughness: RA < 10A
A Si sheet that can provide heat oxidation SiO2 layer; Si + SiO2 + Ti + Pt substrate! Welcome your consultation!
Standard packaging:
Class 1000 ultra clean room class 100 ultra clean bag single box or 25 piece plug-in box package

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