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Third! Huawei invests in the third generation semiconductor enterprise
Update Time : 2020-12-16 View : 2356
The third generation semiconductor chip materials are in the ascendant. Compared with silicon substrate, SiC has higher bandgap width, conductivity and other excellent characteristics, so it is more suitable for application in high-power, high-frequency and high-speed fields. Such as new energy vehicles and 5g RF devices. At the beginning of the year, Xiaomi released 65W Gan USB PD fast charging charger, driving the application of the third generation semiconductor.
Kunshan, Secretary General of the third generation semiconductor industry technology innovation strategic alliance, once told the media that in 2019, the third generation semiconductor will enter the fast track of development, and 2020 is a key window period for the development of China's third generation semiconductor. Automobile, 5g and consumer electronics accelerate the market growth, and major giants make layout in the field of silicon carbide. The author has sorted out the three recent investment of Huawei Hubble technology, which obviously has this meaning.
Semiconductor enterprises invested by Huawei from 2019 to 2020
Hubble technology investment in silicon carbide enterprises: hantiantiancheng, Shandong Tianyue and tiankeheda
On December 1, according to tianyancha app, hantiantiancheng Electronic Technology (Xiamen) Co., Ltd. has recently undergone industrial and commercial changes, adding a new shareholder, Hubble Technology Investment Co., Ltd., and changing its registered capital from about 201 million yuan to about 211 million yuan. Tianyancha app shows that hantiantiancheng Electronic Technology (Xiamen) Co., Ltd. was established in 2011, and its legal representative is Jianhui Zhao (Zhao Jianhui). Its business scope includes research and development, production and sales of semiconductor materials and equipment, as well as relevant technical consultation and services; and the import and export of various commercial products and technologies. Shareholder information shows that the company's shareholders also include China Resources Microelectronics Holding Co., Ltd., longyanxin Sida Technology Co., Ltd.
According to statistics, among the 22 enterprises invested by Huawei Hubble, Shandong Tianyue and tiankeheda are the first to focus on the third generation semiconductor materials, and hantiantiancheng electronics is the third manufacturer focusing on this field. In August 2019, Huawei Hubble invested in Shandong Tianyue, a leading silicon carbide enterprise, and obtained 10% shares; in July 2020, Huawei Hubble invested in Beijing Tianke Heda, a silicon carbide chip manufacturer, with a shareholding ratio of 4.82%.
According to the official website, Han Tiantian Cheng Electronics was established in Xiamen in March 2011. The company introduced the world's advanced SiC epitaxial wafer growth furnace and various imported high-end testing equipment manufactured by aixtron company of Germany, forming a complete SiC epitaxial wafer production line. On March 9, 2012, the company began to accept orders for commercial SiC semiconductor epitaxial wafers, and officially supplied industrialized 3-inch and 4-inch SiC semiconductor epitaxial wafers to domestic and foreign markets. In April 2014, the company accepted the order of commercial 6-inch SiC epitaxial wafers, and officially supplied commercial 6-inch SiC epitaxial wafers to domestic and foreign markets.
Tianke Heda, a leading company in China's third-generation semiconductor material SiC chip, which has been invested by Hubble before, plans to be listed on the science and technology innovation board market in July 2020. The company's revenue consists of three parts: silicon carbide chips account for 48.12%, gem and other silicon carbide products account for 36.65%, and silicon carbide single crystal growth furnace accounts for 15.23%. The company's growth rate is extremely fast. From 2017 to 2019, the company's revenue increased from 24 million yuan to 155 million yuan, with a two-year compound growth rate of 154%.
The prospect of silicon carbide industry and the distribution of Huawei's industrial chain
Before that, Huawei was banned by the United States. In the face of Huawei's core breaking situation, Yu Chengdong said that it was a pity that Huawei had not been involved in the field of chip manufacturing in the past. In the future, Huawei will continue to make efforts in chip design and manufacturing, focusing on breaking through design and precision manufacturing in physics and materials science. Yu Chengdong also said that now semiconductors have shifted from the second generation to the third generation, hoping that Huawei can lead in a new era.
According to the large scale of silicon carbide device market, it is expected that the power consumption of silicon carbide devices will surpass that of silicon carbide devices in 2027 million The market demand of SiC substrate will also increase significantly.
At present, the SiC industry chain is divided into three major links: upstream SiC chip and epitaxy → intermediate power device manufacturing (including the classic IC design → manufacturing → packaging) → downstream industrial control, new energy vehicles, photovoltaic wind power applications.
It is generally believed that Huawei is supporting domestic semiconductor enterprises by giving orders, funds and technology. While taking into account the existing supply chain and forward-looking technology, Hubble's investment layout can alleviate the pressure on supply to a certain extent and form complementarity and synergy with Huawei's business. In the future, these invested enterprises may also form a certain help in Huawei's consumer business and automobile business supply chain.

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