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Gallium phosphide (GAP) crystal substrate, single crystal ch
Update Time : 2020-06-16 View : 5481

Gallium phosphide (GAP) is a kind of III-V compound semiconductor synthesized from gallium (GA) and phosphorus (P). At room temperature, its high purity is orange red transparent chemical Book solid. Gallium phosphide is an important material for making semiconductor visible light-emitting devices, which is mainly used for making commutators, transistors, light tubes, laser diodes and cooling elements.


Basic parameters
Material: gallium phosphide
Model: gap
Characteristics: good insulation
Application: optics, semiconductor, aviation
Category: single crystal, polycrystalline, semiconductor
Brand: Pan American metal
Process customization: Yes
Origin: Guangdong
detailed description
Product Name:
Gallium phosphide (GAP) crystal substrate
Product introduction:
Technical parameters:
Crystal structure:
Cubic a = 5.4505
Growth method:
Tirafa
Density:
4.13  g/cm3
Melting point:
1480 ℃
Coefficient of thermal expansion:
5.3 x10-6
Dopant:
S-doped; undoped
Thermal conductivity:
2~8 x1017/cm3 ;4~ 6 x1016/cm3
Resistivity w.cm:
~0.03 ;~0.3
EPD (cm-2 ):
< 3x10E5 ;< 3x10E5
General dimensions:
Conventional crystal direction: < 111 >; conventional size: 10x10x0.5mm, dia2 "x0.5mm; polishing condition: single or double polishing;
Note: the direction and size can be customized according to the customer's requirements.
remarks:
Class 1000 super clean room class 100 super clean bag


基本参数

材质:磷化镓

型号:GaP

特性:绝缘性好

用途:光学,半导体,航空

种类:单晶,多晶,半导体

品牌:泛美金属

加工定制:是

产地:广东


详细说明

产品名称:

磷化镓(GaP)晶体基片

产品简介


技术参数:

晶体结构

立方         a =5.4505

生长方法:

提拉法

密度:

4.13  g/cm3

熔点:

1480

热膨胀系数

5.3 x10-6

掺杂物质

掺S 不掺杂

热传导率

2~8 x1017/cm3 4~ 6 x1016/cm3

电阻率W.cm

~0.03 ~0.3

EPD (cm-2 )

< 3x10E5 < 3x10E5


常规尺寸:

常规晶向:<111>;常规尺寸:10x10x0.5mm、dia2"x0.5mm;抛光情况:单抛或双抛;

注:可按客户需求定制相应的方向和尺寸。

备注:

1000级超净室100级超净袋

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