The lattice constants of GaSb single crystal match the lattice constants of solid melts of various ternary, Quaternary and III-V compounds with band gaps in the range of 0.8-4.3um As a substrate material, GaSb can be used as a laser and detector for infrared fiber transmission. The lattice confinement mobility of GaSb is higher than that of GaAs, which makes it have a potential application in microwave devices.
Growth method
Liquid seal extraction LEC
crystal structure
cube
Lattice constant (nm)
zero point six zero nine
Crystallographic orientation
< 100 >, < 110 >, < 111 > ± 0.5 º, or special direction
Doping degree
Light, medium and heavy admixtures
Dopant element
Undoped
Te doping
Te doping
Zn doping
Conductive type
P
P-
N
N-
P+
Band gap (EV)
zero point seven five
Resistivity (Ω· cm)
Mobility (cm2 / (V · s))
Carrier density (/ cm3)
1~2×1017
1~5×1016
2~6×1017
1~5×1016
1~5×1018
Dislocation density (EPD) (/ cm2)
<5×104
size
Φ 3 ″× 0.5, Φ 2 ″× 0.5, special direction and size can be customized according to customer requirements
surface
Single, double or cutting
Thickness (UM)
500, thickness tolerance + - 10um, customizable
TTV (Total Thickness
Variation)
TIR (Total Indicated
Reading)
Bow
Warp
packing
Class 100 clean bag, class 1000 super clean room
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生长方法
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液封提拉法LEC
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晶体结构
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立方
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晶格常数(nm)
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0.609
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晶向
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、、±0.5º、或特殊方向
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掺杂程度
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轻掺、中掺、重掺
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掺杂元素
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不掺杂
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掺Te
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掺Te
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掺Zn
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导电类型
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P
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P-
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N
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N-
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P+
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带隙（eV）
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0.75
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电阻率（Ω·cm）
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迁移率(cm2/(v·s))
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载流子密度（/cm3）
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1~2×1017
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1~5×1016
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2~6×1017
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1~5×1016
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1~5×1018
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位错密度（EPD）（/cm2）
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<5×104
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尺寸
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Φ3″×0.5、Φ2″×0.5,可按照客户需求，定制特殊方向和尺寸
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表面
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单抛片、双抛片或者切割片
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厚度(um)
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500，厚度公差+-10um，可定制
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TTV (Total Thickness
Variation)
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TIR (Total Indicated
Reading)
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Bow
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Warp
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包装
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100级洁净袋，1000级超净室
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Simple substance